Frequency-modulation-type MI sensor using amophous wire and CMOS inverter multivibrator

被引：13
|
作者：
Cai, CA [1 ]
Usami, K [1 ]
Hayashi, A [1 ]
Mohri, K [1 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 01期
关键词：
amorphous wire; CMOS multivibrator; frequency modulation; magnetoimpedance (MI); magnetic sensor;
D O I：
10.1109/TMAG.2003.816768
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new frequency-modulation-type magnetoimpedance (MI) sensor using amorphous wire and a complimentary metal-oxide-semiconductor (CMOS) multivibrator is presented. The normal switching mode (mode I) with the alternative saturation and off states in the p-MOSFET and n-MOSFET maintains a stable multivibrator oscillation and simultaneous CMOS unsaturation state mode (mode II) generates a sensitive MI effect. A 50%/Oe change in the oscillation frequency versus external dc magnetic field was obtained. A linear sensor characteristic is obtained using a negative feedback through a frequency-voltage converter.
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页码：161 / 163
页数：3
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