Frequency-modulation-type MI sensor using amophous wire and CMOS inverter multivibrator

被引：13

作者：

Cai, CA ^{[1
]}

Usami, K ^{[1
]}

Hayashi, A ^{[1
]}

Mohri, K ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 01期

关键词：

amorphous wire; CMOS multivibrator; frequency modulation; magnetoimpedance (MI); magnetic sensor;

D O I：

10.1109/TMAG.2003.816768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new frequency-modulation-type magnetoimpedance (MI) sensor using amorphous wire and a complimentary metal-oxide-semiconductor (CMOS) multivibrator is presented. The normal switching mode (mode I) with the alternative saturation and off states in the p-MOSFET and n-MOSFET maintains a stable multivibrator oscillation and simultaneous CMOS unsaturation state mode (mode II) generates a sensitive MI effect. A 50%/Oe change in the oscillation frequency versus external dc magnetic field was obtained. A linear sensor characteristic is obtained using a negative feedback through a frequency-voltage converter.

引用

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页码：161 / 163

页数：3

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