Epitaxial growth and characterization of Co2MnSi thin films on GaAs with MgO interlayer

被引：6

作者：

Uemura, Tetsuya ^{[1
]}

Imai, Yosuke ^{[1
]}

Kawagishi, Saori ^{[1
]}

Matsuda, Ken-ichi ^{[1
]}

Yamamoto, Masafumi ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 06期

关键词：

Co2MnSi; Heusler materials; MgO barrier; GaAs; epitaxial growth;

D O I：

10.1016/j.physe.2007.09.073

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural and magnetic properties of Co-2 MnSi (CMS) thin films epitaxially grown on GaAs substrates by sputtering were investigated. The CMS film directly grown on GaAs showed a cube-on-cube crystallographic relation, while it was rotated by 45 degrees in the (001) plane when a thin MgO layer was inserted between the CMS and GaAs. The CMS film directly grown on GaAs showed strong magnetic anisotropy consisting of a uniaxial anisotropy with an easy axis of CMS[1 (1) over bar0] (GaAs[1 (1) over bar0] direction and a cubic anisotropy with easy axes of CMS < 110 > directions. The uniaxial anisotropy was weakened in the samples with a MgO interlayer. The magnetization value of the CMS film with a 3.0-nm-thick MgO was approximately 820 emu/cm(3) (3.9 mu B/f.u.) at room temperature, a value slightly higher (similar to 7%) than that of the sample without MgO. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：2025 / 2027

页数：3

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