Memory operation of silicon quantum-dot floating-gate metal-oxide-semiconductor field-effect transistors

被引：66

作者：

Kohno, A ^{[1
]}

Murakami, H ^{[1
]}

Ikeda, M ^{[1
]}

Miyazaki, S ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 7B期

关键词：

MOS memory; floating gate; silicon quantum dot; memory function; electron charging; multiple-step charging;

D O I：

10.1143/JJAP.40.L721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The drain current versus gate voltage characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) with a silicon quantum-dot (QD) layer floating gate have shown the unique hysteresis and current bumps which arise from the electron charging or discharging of the QDs with an average dot height of 5 nm. The drain current response to application of a single-pulse gate bias has revealed that the multiple-step charging of the QD layer occurs until single electron occupation at each QD is achieved.

引用

页码：L721 / L723

页数：3

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