Self-Aligned Gate-First In0.7Ga0.3As n-MOSFETs with an InP Capping Layer for Performance Enhancement

被引：12

作者：

Gong, Xiao ^{[1
]}

Ivana ^{[1
]}

Chin, Hock-Chun ^{[1
]}

Zhu, Zhu ^{[1
]}

Lin, You-Ru ^{[2
]}

Ko, Chih-Hsin ^{[2
]}

Wann, Clement H. ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Singapore 117576, Singapore

[2] Taiwan Semicond Mfg Co, Hsinchu 201616, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1149/1.3526139

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the first demonstration of InP-capped In0.7Ga 0.3 As channel n-metal-oxide-semiconductor field-effect transistors (MOSFETs) using a self-aligned gate-first process. MOSFETs with the gate length LG down to 350 nm were fabricated, and the dependence of device performance on the InP thickness (2 and 4 nm) was investigated. InP capping leads to a significant reduction in the subthreshold swing S. Transconductance and saturation drain current are enhanced in n-MOSFETs with the InP-capped In 0.7Ga0.3 As channel as compared with those without InP capping, indicating an increased electron mobility in the In 0.7Ga0.3 As channel due to the InP capping. © 2010 The Electrochemical Society.

引用

页码：H117 / H119

页数：3

共 25 条

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[23] Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress
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[24] Self-aligned In0.53Ga0.47As MOSFETs with Atomic Layer Deposited Al2O3, ZrO2, and Stacked Al2O3/ZrO2 Gate Dielectrics
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APPLIED PHYSICS LETTERS, 2008, 92 (20)

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