Ultra-shallow P+/N junctions formed by recoil implantation

被引：8

作者：

Liu, HL ^{[1
]}

Gearhart, SS ^{[1
]}

Booske, JH ^{[1
]}

Wang, W ^{[1
]}

机构：

[1] Univ Wisconsin, Engn Res Ctr Plasma Aided Mfg, Madison, WI 53706 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 09期

基金：

美国国家科学基金会;

关键词：

recoil implantation; Si; ultra-shallow junctions;

D O I：

10.1007/s11664-998-0157-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The concept of recoil implantation is proposed to facilitate fabrication of ultrashallow p(+)/n junctions. In this method, a thin boron film is first deposited onto the Si wafer surface. Then the boron atoms are knocked into the Si substrate by Ge implantation or Ar plasma source ion implantation. Dopant activation and damage removal are achieved via rapid thermal annealing. Preliminary results show the realization of sub-100 nm deep p(+)/n junctions with this technique. Monte Carlo simulations were performed to predict the recoiled boron profiles, and agree well with the experimental results.

引用

页码：1027 / 1029

页数：3

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