High Voltage AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) Employing Oxygen Annealing

被引：0

作者：

Choi, Young-Hwan ^{[1
]}

Lim, Jiyong ^{[1
]}

Kim, Young-Shil ^{[1
]}

Seok, Ogyun ^{[1
]}

Kim, Min-Ki ^{[1
]}

Han, Min-Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul, South Korea

来源：

2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2010年

关键词：

GAN TRANSISTORS; LEAKAGE CURRENT; BUFFER LEAKAGE; PASSIVATION; GATE; SURFACE; DEVICES; GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The blocking characteristics of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) were considerably improved by an oxygen (O-2) annealing. This proposed annealing, which was performed before Schottky contact formation, successfully decreased the leakage current though the buffer region by about six orders of magnitude and had no effect on the current capability of the active region. The suppressed leakage current may be due to the improved surface condition induced by the reaction between oxygen and the AlGaN/GaN heterostructure. The proposed device employing the O-2-annealing exhibited a suppressed leakage current and a high breakdown voltage of 1140 V without any surface passivation or edge termination structure.

引用

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页码：233 / 236

页数：4

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