Influence of temperature processing on resistivity, temperature coefficient of resistance and phase composition of two-layer films on the base of Ti and Al or Ti and Ni, whose total thickness did not exceed 100 nm, is investigated. As shown, the annealing at T(a) = 800 K leads to solid-phase reactions between Al and TiO (Ti/Al films) or between Ti and Ni (Ni/Ti films), whose yields are TiAl(3), and Ni(3)Ti (in the films, which were annealed at 900-1000 K, NiTi and NiTi(2) phases are observed). Correlation between the phase composition and electrophysical properties of two-layer film systems is revealed.