Fundamentals of melt growth

被引:0
|
作者
Mueller, Georg [1 ]
机构
[1] Univ Erlangen Nurnberg, Dept Mat Sci WW6, Crystal Growth Lab, Fraunhofer Inst IISB, D-91058 Erlangen, Germany
关键词
crystal growth from melts; melt growth; phase diagrams; segregation coefficient; growth kinetics; facets; striations; Czochralski method; Bridgman method;
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Melt growth is the most important growth method for the production of bulk single crystals of semiconductors, oxides, metals and other materials. Its technology can only be understood or improved by a profound knowledge of the underlying fundamentals, like phase diagrams, growth kinetics, heat and species transport. This article treats relevant aspects of these fundamentals in close correlation to the most important melt growth processes, the Czochralski and Gradient Freeze (Bridgman) methods.
引用
收藏
页码:3 / 33
页数:31
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