Arginine-assisted Thermal Decomposition for Synthesis of Nanosized Co3O4 with Enhanced Capacitance

被引:7
|
作者
Zou, Ruyi [1 ,2 ]
Zhu, Lin [1 ]
Luo, Guiling [1 ]
Niu, Yanyan [1 ]
Xie, Hui [1 ]
Dong, Ruixia [1 ]
Cheng, Hui [1 ]
Sun, Wei [1 ]
Zhang, Laijun [2 ]
机构
[1] Hainan Normal Univ, Key Lab Laser Technol & Optoelect Funct Mat Haina, Key Lab Funct Mat & Photoelectrochem Haikou, Coll Chem & Chem Engn, Haikou 571158, Hainan, Peoples R China
[2] Shangrao Normal Univ, Sch Chem & Environm Sci, Jiangxi Prov Key Lab Polymer Preparat & Proc, Shangrao 334001, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Supercapacitor; Electrochemistry; Nanosized Co3O4; Thermal decomposition; Arginine; PERFORMANCE; NANOWIRES; OXIDE; NANORODS; SHEETS;
D O I
10.20964/2020.01.74
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Arginine-assisted thermal decomposition technique was used to prepare nanosized Co3O4 (A-Co3O4) with its supercapacitive performances checked. A-Co3O4 was characterized by different techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and scanning electron microscopy. Brunauer-Emmett-Teller analysis revealed that A-Co3O4 had a larger specific surface area than Co3O4 prepared by conventional calcination without arginine (F-Co3O4). Electrochemical performances of A-Co3O4 based electrode were better than that of the F-Co3O4 based electrode. Cyclic voltammetric results showed the specific capacitances of A-Co304 and F-Co3O4 were found to be 259.2 and 122.2 F/g at a scan rate of 0.01 V/s. Long-term galvanostatic charge-discharge cycling tests indicated the specific capacitance for A-Co3O4 and F-Co3O4 were 128.6 F/g and 106.4 F/g with 104.7% and 103.3% capacitance retention after 1000 cycles at a current density of 5.0 A/g. Electrochemical impedance spectra analysis showed the charge transfer resistance (Rct) of A-Co3O4 was 7.56 Omega and that of F-Co3O4 was 15.56 Omega. All the results indicated the A-Co3O4 exhibited superiority originated from large surface area with porous structure.
引用
收藏
页码:484 / 492
页数:9
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