Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation

被引：33

作者：

Song, Jae-Joon ^{[1
]}

Choi, Bo Kyoung ^{[2
]}

Zhang, En Xia ^{[2
]}

Schrimpf, Ronald D. ^{[2
]}

Fleetwood, Daniel M. ^{[2
]}

Park, Chan-Hoon ^{[1
]}

Jeong, Yoon-Ha ^{[1
]}

Kim, Ohyun ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Pohang 790784, South Korea

[2] Vanderbilt Univ, Elect Engn & Comp Sci Dept, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Fin width; FinFETs; multiple-gate MOSFETs; total dose irradiation; worst-case bias configuration; TRANSISTOR RESPONSE; INTERFACE TRAPS;

D O I：

10.1109/TNS.2011.2168977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The total ionizing dose response of triple-gate MOSFETs is investigated for various fin widths and bias conditions. Experiments and simulations are used to analyze the buildup of trapped charge in the buried oxide and its impact on the threshold-voltage shift and subthreshold-slope degradation. The higher total-dose tolerance of multiple-gate FinFETs with narrow fins is attributed to lateral gate control over the electrostatic potential in the body and especially at the Si fin/BOX interface. It is demonstrated that ON-state irradiation is the worst-case bias configuration for triple-gate MOSFETs through extensive experimental analysis.

引用

页码：2871 / 2875

页数：5

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