Monte Carlo Modeling of the Diodes with Lateral Resonant Tunneling Border

被引：0
|
作者：
Botsula, O. V. [1 ]
Prykhodko, K. H. [1 ]
Zozulia, V. O. [1 ]
机构：
[1] Kharkov Natl Univ, Sch Radiophys Biomed Elect & Comp Syst, Kharkov, Ukraine
来源：
2018 9TH INTERNATIONAL CONFERENCE ON ULTRAWIDEBAND AND ULTRASHORT IMPULSE SIGNALS (UWBUSIS) | 2018年
关键词：
resonant tunneling border; quantum well; current voltage characteristics; heterojunction; negative differential resistance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diodes with resonant tunneling border (RTB) are studied as possible high speed and wide-band devices. The diodes represent planar two-terminal n(+)-n-n(+)-GaAs-based structures containing the lateral active border as a AlGaAs/GaAs double barrier resonant tunneling structure connected to anode contact. The 2-D model of electron transport in the device is proposed. The analysis of the diodes operation was performed using ensemble Monte Carlo technique. Transfer matrix approach for simulation of tunneling transfer is applied. The influence of parameters of the diode structure such as a position of RTB, a composition of AlGaAs barriers and a material doping on current - voltage characteristics of diode has been investigated.
引用
收藏
页码：256 / 259
页数：4
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