A high efficiency full-wave rectifier in standard CMOS technology

被引：0
|
作者：
Bawa, Gaurav [1 ]
Jow, Uei-Ming [1 ]
Ghovanloo, Maysam [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mu m 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 k Omega load, resulting in a measured power conversion efficiency of 85%.
引用
收藏
页码：69 / 72
页数：4
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