Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1-x alloys

被引：33

作者：

Kudrawiec, R. ^{[1
]}

Kopaczek, J. ^{[1
]}

Misiewicz, J. ^{[1
]}

Petropoulos, J. P. ^{[2
]}

Zhong, Y. ^{[3
]}

Zide, J. M. O. ^{[3
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[3] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

关键词：

BAND-GAP; GAAS1-XBIX; SPECTROSCOPY; EPITAXY; ALLOYS; GABIAS;

D O I：

10.1063/1.3669703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Energies of E-0 and E-0 + Delta(SO) transitions in In0.53Ga0.47BixAs1-x alloys with 0 < x <= 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E-0 transition shifts to longer wavelengths (similar to 50 meV/% of Bi), while the E-0 + Delta(SO) transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669703]

引用

页数：3

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