First on-wafer power characterization of MMIC amplifiers at sub-millimeter wave frequencies

被引：5

作者：

Fung, A. K. ^{[1
]}

Gaier, T. ^{[1
]}

Samoska, L. ^{[1
]}

Deal, W. R. ^{[2
]}

Radisic, V. ^{[2
]}

Mei, X. B. ^{[2
]}

Yoshida, W. ^{[2
]}

Liu, P. S. ^{[2
]}

Uyeda, J. ^{[2
]}

Barsky, M. ^{[2
]}

Lai, R. ^{[2
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 06期

基金：

美国国家航空航天局;

关键词：

amplifier; monolithic microwave integrated circuit (MMIC); MM-wave; power measurement;

D O I：

10.1109/LMWC.2008.922713

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.

引用

页码：419 / 421

页数：3

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