First on-wafer power characterization of MMIC amplifiers at sub-millimeter wave frequencies

被引:5
|
作者
Fung, A. K. [1 ]
Gaier, T. [1 ]
Samoska, L. [1 ]
Deal, W. R. [2 ]
Radisic, V. [2 ]
Mei, X. B. [2 ]
Yoshida, W. [2 ]
Liu, P. S. [2 ]
Uyeda, J. [2 ]
Barsky, M. [2 ]
Lai, R. [2 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] Northrop Grumman Corp, Redondo Beach, CA 90278 USA
基金
美国国家航空航天局;
关键词
amplifier; monolithic microwave integrated circuit (MMIC); MM-wave; power measurement;
D O I
10.1109/LMWC.2008.922713
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.
引用
收藏
页码:419 / 421
页数:3
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