Janus two-dimensional transition metal dichalcogenides

被引:0
|
作者
Zhang, Lei [1 ]
Xia, Yong [1 ]
Li, Xudong [1 ]
Li, Luying [2 ]
Fu, Xiao [3 ,4 ]
Cheng, Jiaji [1 ]
Pan, Ruikun [1 ]
机构
[1] Hubei Univ, Sch Mat Sci & Engn, Minist Educ Key Lab Green Preparat & Applicat Func, Hubei Prov Key Lab Polymers, Wuhan 430062, Peoples R China
[2] Huazhong Univ Sci & Technol, Ctr Nanoscale Characterizat & Devices, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[3] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai, Peoples R China
关键词
MOSSE MONOLAYER; LAYER MOS2; GROWTH; PIEZOELECTRICITY; SPIN; PHOTOCATALYST; MOMENT; WSSE;
D O I
10.1063/5.0095203
中图分类号
O59 [应用物理学];
学科分类号
摘要
Structural symmetry plays a crucial role in the electronic band structure and properties of two-dimensional materials. In contrast to graphene, monolayer transition metal dichalcogenides exhibit intrinsic in-plane asymmetry with suitable direct bandgaps and distinctive optical properties. Efforts have been devoted to breaking their out-of-plane mirror symmetry by applying external electric fields, vertical stacking, or functionalization. The successful fabrication of Janus transition metal dichalcogenides offers a synthetic strategy to breaking the vertical mirror symmetry, leading to a variety of novel properties, such as vertical piezoelectricity, Rashba spin splitting, and excellent exciton properties. Here, we discuss the universal fabrication approaches and unique properties of Janus transition metal dichalcogenides and further present a brief perspective on their potential applications and challenges. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:9
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