The thermal gain effect in GaAs-based HBT's

被引：0
|
作者：
Curtice, WR [1 ]
Hietala, VM [1 ]
Gebara, E [1 ]
Laskar, J [1 ]
机构：
[1] WR Curtice Consulting, Washington Crossing, PA 18977 USA
来源：
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年
关键词：
D O I：
10.1109/MWSYM.2003.1212454
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The existence of increased, low frequency gain in GaAs HBT amplifiers is shown to be due to temperature modulation by the input signal. Device data is presented and the effect is reproduced using an electrothermal HBT model. The effect may be important in many broadband, bipolar device applications.
引用
收藏
页码：639 / 641
页数：3
相关论文
共 50 条
  • [1] The Effect of Quantum Well Base in GaAs-Based HBT
    Jha, Amit Kumar
    Jena, Manas Ranjan
    MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS, 2023, 904 : 265 - 274
  • [2] Experimental procedure for the evaluation of GaAs-based HBT's reliability
    Maneux, C
    Labat, N
    Malbert, N
    Touboul, A
    Danto, Y
    Dumas, JM
    Riet, M
    Benchimol, JL
    MICROELECTRONICS JOURNAL, 2001, 32 (04) : 357 - 371
  • [3] Rigorous thermal treatment of heat generation and heat transfer in GaAs-based HBT device modeling
    Mohammadi, FA
    Meres, K
    Yagoub, MCE
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005, : 604 - 608
  • [4] 50-GHz-bandwidth baseband amplifiers using GaAs-based HBT's
    Suzuki, Y
    Shimawaki, H
    Amamiya, Y
    Nagano, N
    Niwa, T
    Yano, H
    Honjo, K
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (09) : 1336 - 1341
  • [5] Ordered-InGaPSb/GaAs-based FET and HBT structures grown by MOVPE
    Kikkawa, T
    Nishioka, T
    Tanaka, H
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 464 - 467
  • [6] RF performances of GaAs HBT's and thermal investigations
    Cazarre, A
    Andrieux, L
    Marty, A
    Camps, T
    Tasselli, J
    Souverain, P
    PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX), 1999, 99 (04): : 111 - 117
  • [7] The Impact of Band Bending on the Thermal Behaviour of Gain in Type-II GaAs-Based "W"-Lasers
    Duffy, Dominic A.
    Marko, Igor P.
    Fuchs, Christian
    Stolz, Wolfgang
    Sweeney, Stephen J.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2025, 31 (02)
  • [8] A GaAs-Based HBT 31-GRz Frequency Doubler with an On-Chip Voltage
    Haung, Bo-Jiun
    Tsai, Zuo-Min
    Huang, Bo-, Jr.
    Lin, Kun-You
    Wang, Huei
    Chiong, Chau-Ching
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 206 - 209
  • [9] Thermal modeling of GaAs-based semiconductor disk lasers
    Zhang, Peng
    Song, Yan Rong
    Men, Yan Bin
    Dai, Te Li
    Liang, Yi Ping
    Fan, Si Qiang
    OPTIK, 2012, 123 (07): : 629 - 633
  • [10] GAAS-BASED CLUSTERS
    RUDA, HE
    PING, JG
    PHYSICAL REVIEW B, 1992, 46 (24): : 15936 - 15945
12345