The Effect of Quantum Well Base in GaAs-Based HBT

被引：0
|
作者：
Jha, Amit Kumar [1 ]
Jena, Manas Ranjan [1 ]
机构：
[1] Veer Surendra Sai Univ Technol Burla, Dept Elect & Commun Engn, Sambalpur, Odisha, India
来源：
MICRO AND NANOELECTRONICS DEVICES, CIRCUITS AND SYSTEMS | 2023年 / 904卷
关键词：
Quantum well; QWBHBT; Linearity; TRANSISTOR;
D O I：
10.1007/978-981-19-2308-1_28
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The improvement in DC and RF characteristics of Quantum Well base in GaAs HBT (Hetero Junction Bipolar Transistor) is presented. Based on an experimentally validated model of the Silvaco TCAD tool, the properties of the GaAs HBT are simulated. Our results are indicative that Quantum Well base in HBT has the best DC characteristics like the current gain (760) and the lowest offset voltage (5.9 mV). However, the RF performance of the HBT is observed to be poor with the unity gain cut-off frequency recording a value of f(T) = 1 MHz.
引用
收藏
页码：265 / 274
页数：10
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