Mask aligner lithography using laser illumination for versatile pattern generation

被引:14
|
作者
Weichelt, T. [1 ]
Bourgin, Y. [1 ]
Zeitner, U. D. [1 ,2 ]
机构
[1] Friedrich Schiller Univ Jena, Abbe Ctr Photon, Inst Appl Phys, D-07745 Jena, Germany
[2] Fraunhofer Inst Appl Opt & Precis Engn, D-07745 Jena, Germany
来源
OPTICS EXPRESS | 2017年 / 25卷 / 18期
关键词
BEAM LITHOGRAPHY; GRATINGS; OPTIMIZATION; FABRICATION; EFFICIENCY;
D O I
10.1364/OE.25.020983
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Mask aligner lithography is a well-established back-end fabrication process in microlithography. Within the last few years, resolution enhancement techniques have been transferred and adapted from projection lithography to further develop mask aligner lithography, especially concerning achievable resolution. Nonetheless, current technology using a mercury vapor lamp as a light source has reached its limits, e.g. for high-resolution pattering. Within this paper, we present the extension of the existing mask aligner illumination system by replacing the mercury vapor lamp with a solid-state laser. Full-field mask aligner lithography is guaranteed by a rotating diffuser expanding the laser beam and minimizing undesired speckle effects. An additional integrated galvanometer scanner allows a flexible choice of arbitrary angular spectrum distributions of the photomask illumination. We show versatile results like simple binary patterns of squares and triangles, as well as a more complex lateral shape like a blazed grating. (C) 2017 Optical Society of America
引用
收藏
页码:20983 / 20992
页数:10
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