A CMOS high-frequency and low-voltage tunable positive transconductor with a improved linearization technique

被引：0
|
作者：
del Pozo, J. M. Garcia [1 ]
Martinez, P. A. [1 ]
Otin, A. [1 ]
Medrano, N. [1 ]
机构：
[1] Univ Zaragoza, Elect Design Grp I3A, Zaragoza, Spain
来源：
2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3 | 2007年
关键词：
tunable transconductor; high-frequency; low-voltage; linearization technique;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present a high frequency and low-voltage positive tunable CMOS transconductor using low cost 0.35 mu m CMOS technology. The system works with 2.2 V supply voltage achieving operation frequencies and transconductances higher than 2 GHz and 750 mu S. The circuit has been designed with an improved linearization technique based on the parallel of an NMOS transistor in saturation with another NMOS transistor in triode region.
引用
收藏
页码：150 / 153
页数：4
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