HIGH-FREQUENCY LOW-VOLTAGE CMOS DIODE

被引：23

作者：

RAMIREZANGULO, J

机构：

[1] Department of Electrical and Computer Engineering, New Mexico State University, Las Cruces

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 03期

关键词：

CIRCUIT THEORY AND DESIGN; RECTIFYING CIRCUITS;

D O I：

10.1049/el:19920184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS class AB rectifier is presented. It can operate at 100 MHz for 2-mu-m CMOS technology and with +/- 1.5 V supplies. Simulations and experimental results from a CMOS test chip are shown that verify the proposed circuit.

引用

页码：298 / 300

页数：3

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