Resistance Switching in Electrodeposited VO2 Thin Films

被引：54
|
作者：
Koza, Jakub A.
He, Zhen
Miller, Andrew S.
Switzer, Jay A. [1 ]
机构：
[1] Missouri Univ Sci & Technol, Dept Chem, Rolla, MO 65409 USA
来源：
CHEMISTRY OF MATERIALS | 2011年 / 23卷 / 18期
基金：
美国国家科学基金会;
关键词：
vanadium dioxide; metal-to-insulator transition; resistance switching; electrodeposition; METAL-INSULATOR-TRANSITION; VANADIUM; OXIDATION; SURFACE; OXIDES;
D O I：
10.1021/cm2019394
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Films of VO2 are deposited by electrochemically reducing a triethanolamine complex of V(V) in an aqueous solution, followed by a short anneal at 400 °C. The VO2 undergoes a metal-to-insulator transition (MIT) at 322 K, and exhibits sharp resistance switching at room temperature with very low current (0.5 mA) and voltage (0.12 V) requirements. The electrodeposition method opens up inexpensive possibilities for the fabrication of ultrafast switches, Mott field effect transitions, memristors, and solid-state memory. © 2011 American Chemical Society.
引用
收藏
页码：4105 / 4108
页数：4
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