Resistance Switching in Electrodeposited VO2 Thin Films

Films of VO2 are deposited by electrochemically reducing a triethanolamine complex of V(V) in an aqueous solution, followed by a short anneal at 400 °C. The VO2 undergoes a metal-to-insulator transition (MIT) at 322 K, and exhibits sharp resistance switching at room temperature with very low current (0.5 mA) and voltage (0.12 V) requirements. The electrodeposition method opens up inexpensive possibilities for the fabrication of ultrafast switches, Mott field effect transitions, memristors, and solid-state memory. © 2011 American Chemical Society.