Radiation damage of silicon strip detectors in the NA50 experiment

被引：2
|
作者：
Alessandro, B
Beolé, S
Bonazzola, G
Crescio, E
Dabrowski, W
Giubellino, P
Grybos, P
Idzik, M
Martinetto, M
Marzari-Chiesa, A
Masera, M
Prino, F
Ramello, L
Mendes, PR
Riccati, L
Sitta, M
机构：
[1] Acad Min & Met, Fac Phys & Nucl Tech, PL-30059 Krakow, Poland
[2] Ist Nazl Fis Nucl, I-10125 Turin, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 419卷 / 2-3期
关键词：
silicon strip detectors; noisy channels; radiation damage;
D O I：
10.1016/S0168-9002(98)00868-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 20(14) eq n/cm(2) and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the '96 lead ion run as well as results of the post-run measurements are presented in this paper. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：556 / 569
页数：14
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