DESIGN OF X-BAND SUBSTRATE INTEGRATED WAVEGUIDE BANDPASS FILTER WITH DUAL HIGH REJECTION

被引：11

作者：

Rhbanou, Ahmed ^{[1
]}

Bri, Seddik ^{[2
]}

Sabbane, Mohamed ^{[1
]}

机构：

[1] Moulay Ismail Univ, FSM, Dept Math, Meknes 50000, Morocco

[2] Moulay Ismail Univ, ESTM, Dept Elect Engn, MIN, Meknes 50000, Morocco

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2015年 / 57卷 / 07期

关键词：

rectangular waveguide; SIW cavity resonator; microwave filters; transition; SIW-microstrip technology;

D O I：

10.1002/mop.29180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a bandpass substrate integrated waveguide (SIW) filter with dual high rejection, using the topology with iris and the SIW resonators. The simulated results of this filter have shown that the passband is from 9.18 to 10.37 GHz while the insertion loss is -1.19 dB within 12.17% bandwidth around 9.775 GHz and input return loss in the passband is better than -15 dB, with high rejection of -57.04 dB at the frequency 8.81 GHz and a second rejection of -49.34 dB at the frequency 10.94 GHz. All the structures are designed on a single substrate of Arlon 25N permittivity 3.38. The compatibility with planar circuits is provided via a specific microstrip transition (microstrip tapered transitions). (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1744-1752, 2015

引用

页码：1744 / 1752

页数：9

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