X-ray topo-tomography studies of linear dislocations in silicon single crystals

被引:14
|
作者
Asadchikov, Victor [1 ]
Buzmakov, Alexey [1 ]
Chukhovskii, Felix [1 ]
Dyachkova, Irina [1 ]
Zolotov, Denis [1 ]
Danilewsky, Andreas [2 ]
Baumbach, Tilo [3 ,4 ]
Bode, Simon [4 ]
Haaga, Simon [2 ,3 ]
Haenschke, Daniel [3 ]
Kabukcuoglu, Merve [2 ,3 ]
Balzer, Matthias [5 ]
Caselle, Michele [5 ]
Suvorov, Ernest [6 ]
机构
[1] FSRC Crystallog & Photon, Moscow, Russia
[2] Inst Geo & Environm Sci, Crystallog, Freiburg, Germany
[3] Karlsruhe Inst Technol, Inst Photon Sci & Synchrotron Radiat, Karlsruhe, Germany
[4] Karlsruhe Inst Technol, Lab Applicat Synchrotron Radiat, Karlsruhe, Germany
[5] Karlsruhe Inst Technol, Inst Data Proc & Elect, Karlsruhe, Germany
[6] RAS, Inst Solid State Phys, Chernogolovka, Moscow Region, Russia
来源
关键词
X-ray topo-tomography; polygonal dislocation half-loops; synchrotron facilities; Takagi-Taupin equations; linear dislocations; silicon crystals; DIFFRACTION CONTRAST; DYNAMICAL THEORY; SIMULATION; DEFECTS;
D O I
10.1107/S160057671801419X
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi-Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.
引用
收藏
页码:1616 / 1622
页数:7
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