A semianalytical parameter-extraction procedure for HBT equivalent circuit

被引：58
|
作者：
Li, B
Prasad, S
Yang, LW
Wang, SC
机构：
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[3] TRW Co Inc, Redondo Beach, CA 90278 USA
[4] Lockheed Sanders, Nashua, NH 03060 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 10期
基金：
美国国家科学基金会;
关键词：
heterojunction bipolar transistor; parameter extraction; semianalytical method;
D O I：
10.1109/22.721144
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A parameter-extraction approach for the heterojunction bipolar transistor (HBT), which combines the analytical approach and empirical optimization procedure, is developed, The extraction techniques for extrinsic base-collector capacitance and pad parasitics are also included in this approach. The cutoff operation of the HBT's is utilized to extract the values of the pad capacitances. An excellent fit between measured and simulated S-parameters in the frequency range of 50 MHz-36 GHz is obtained over a wide range of bias points.
引用
收藏
页码：1427 / 1435
页数：9
相关论文
共 50 条
  • [31] A novel equivalent circuit and parameter extraction for on-chip spiral inductors
    Zhu, Y. F.
    Lu, J. X.
    Wu, Z. J.
    Zhao, L.
    Shen, Y.
    Tang, X. S.
    Huang, F. Y.
    ASICON 2007: 2007 7TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2007, : 1126 - 1128
  • [32] Direct extraction of base-collector model parameters for AlGaAs/GaAs HBT equivalent circuit
    Lee, S
    ELECTRONICS LETTERS, 1997, 33 (09) : 815 - 817
  • [33] NEW CIRCUIT MODEL FOR RF PROBE PADS AND INTERCONNECTIONS FOR THE EXTRACTION OF HBT EQUIVALENT-CIRCUITS
    LEE, SH
    GOPINATH, A
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (10) : 521 - 523
  • [34] Improved automatic parameter extraction of InP-HBT small-signal equivalent circuits
    Willén, B
    Rohner, M
    Schnyder, I
    Jäckel, H
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (02) : 580 - 583
  • [35] An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
    Chen, HY
    Chen, KM
    Huang, GW
    Chang, CY
    Huang, TY
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2005, 44 (05) : 456 - 460
  • [36] An improved parameter-extraction method of SiGe HBTs' substrate network
    Chen, Han-Yu
    Chen, Kun-Ming
    Huang, Guo-Wei
    Chang, Chun-Yen
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (06) : 321 - 323
  • [37] SiGe HBT large signal equivalent circuit model
    Hu, HY
    Zhang, HM
    Lü, Y
    Dai, XY
    Hou, H
    Ou, JF
    Wang, W
    Wang, XY
    ACTA PHYSICA SINICA, 2006, 55 (01) : 403 - 408
  • [38] Extraction of small signal equivalent circuit model parameters for statistical modeling of HBT using artificial neural
    Taher, H.
    Schreurs, D.
    Nauwelaers, B.
    GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005, : 213 - 216
  • [39] Parameter extraction for photodiode equivalent circuit model based on hybrid genetic algorithm
    Li, Tonghui
    Duan, Xiaofeng
    Liu, Kai
    Huang, Yongqing
    MICROELECTRONICS JOURNAL, 2024, 143
  • [40] Equivalent circuit parameter extraction of microstrip coupling lines using FDTD method
    Liou, LL
    Mah, MY
    Ferendeci, A
    IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM, VOLS 1-4: TRANSMITTING WAVES OF PROGRESS TO THE NEXT MILLENNIUM, 2000, : 1488 - 1491
12345