Electrochemical high-energy deposition of CdSe nanostructures: modelling, synthesis and characterization

被引:0
|
作者
Maliy, Liubov [1 ]
Mamaev, Anatoliy [1 ]
Mamaeva, Vera [1 ]
机构
[1] Natl Res Tomsk State Univ, 36 Lenin Prospect, Tomsk 634050, Russia
关键词
High-potential pulse deposition; High-energy electrochemistry; Non-steady state diffusion; Modelling; Codeposition; CdSe nanostructures; THIN-FILMS; CADMIUM SELENIDE; SOLAR-CELLS; ELECTRODEPOSITION; PULSE; SEMICONDUCTORS;
D O I
10.1007/s10800-017-1106-x
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Cadmium selenide nanostructures have been electrodeposited on Ti substrate from aqueous acidic solution under high-energy conditions produced by pulse potential technique employing -300 V deposition potential and 50 A mu s pulse width. The transport processes in non-steady state have been studied by mathematical modelling on the basis of the diffusion equation. The calculations have confirmed that the high-voltage pulse electrodeposition operates very high energy localized close to the electrode surface, and the limit of the CdSe formation zone was calculated to be 1 A mu m from the cathode surface. It has been demonstrated that the solution composition affects the deposit morphology through its effect on the local current density in the near-electrode layer. X-ray diffraction analysis showed as-deposited CdSe had zinc blende crystalline structure that changed to hexagonal after annealing. Local elemental analysis confirmed stoichiometric composition of as-deposited and annealed deposits. The optical band gap was found to be 1.64 eV from the absorbance spectra. [GRAPHICS] .
引用
收藏
页码:1073 / 1082
页数:10
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