Positron lifetime calculations for stacking fault tetrahedra in copper

被引:4
|
作者
Van Petegem, S. [1 ]
Kuriplach, J. [2 ]
Derlet, P. M. [1 ]
Van Swygenhoven, H. [1 ]
机构
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[2] Charles Univ Prague, Fac Math & Phys, Dept Low Temp Phys, Prague 18000, Czech Republic
关键词
D O I
10.1002/pssc.200675817
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
We investigate the positron response of simulated stacking fault tetrahedra in Cu. We find that in both the regular and truncated stacking fault tetrahedra positron lifetimes are about 10-15 ps larger than the bulk lifetime. This is an indication that the vacancy-like defects observed in neutron irradiated Cu by positron annihilation lifetime measurements do not arise during the formation of the stacking fault tetrahedra but rather during the interaction of the stacking fault tetrahedra with other defects. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3514 / +
页数:2
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