Comparing crystallography and ferroelectric properties of a-axis oriented Bi3.25La0.75Ti3O12 versus non-c-axis oriented SrBi2Ta2O9 thin films on Si(100)

被引：2
|
作者：
Hesse, D [1 ]
Lee, HN [1 ]
Zakharov, ND [1 ]
机构：
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany
来源：
FERROELECTRICS | 2003年 / 288卷
关键词：
bismuth-layered perovskites; thin films; epitaxy; ferroelectricity;
D O I：
10.1080/00150190390211242
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Growth, structure and properties of a-axis oriented ferroelectric Bi3.25La0.75Ti3O12 thin films on SrRuO3-electroded, buffered Si(100) substrates are compared with those of (116)-oriented ferroelectric SrBi2Ta2O9 thin films on the same substrate. It is shown how the ferroelectric properties of (116)-oriented SrBi2Ta2O9 films suffer from certain inherent crystallographic properties of the films, whereas a-axis oriented Bi3.25La0.75Ti3O12 thin films are free from such shortcomings. In result, the latter have a very large remanent polarization in amount of 32 muC/cm(2)-a new record for bismuth-layered perovskite thin films on substrates-pointing to the superiority of a-axis oriented Bi3.25La0.75Ti3O12 thin films with respect to memory applications.
引用
收藏
页码：287 / 301
页数：15
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