Fabrication of nanoporous tungsten oxide by galvanostatic anodization

被引:117
|
作者
Mukherjee, N
Paulose, M
Varghese, OK
Mor, GK
Grimes, CA [1 ]
机构
[1] Penn State Univ, Mat Res Lab 217, Dept Elect Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Mat Res Lab 217, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] SenTech Corp, State Coll, PA 16803 USA
关键词
D O I
10.1557/JMR.2003.0321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanoporous tungsten oxide (WO3), with pores of 50 to 100 nm in diameter, has been obtained by galvanostatic (constant-current) anodization of tungsten in a 0.25 M oxalic acid electrolyte. At room temperature, the optimum current density for nanoporous formation is approximately 6.5 to 8 mA/cm(2). Monitoring of the anodization voltage during the fabrication process reveals a close match with the theoretical model of Parkhutik et al. [V.P. Parkhutik and V.I. Shershulsky, J. Phys. D 25, 1258 (1992)] for growth of nanoporous Al2O3. The as-anodized films are amorphous and crystallize upon annealing at 350 degreesC in an oxygen atmosphere.
引用
收藏
页码:2296 / 2299
页数:4
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