Integrated finely tunable microring laser on silicon

被引:5
|
作者
Liang, D. [1 ]
Huang, X. [1 ]
Kurczveil, G. [1 ]
Fiorentino, M. [1 ]
Beausoleil, R. G. [1 ]
机构
[1] Hewlett Packard Enterprise, Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304 USA
关键词
D O I
10.1038/NPHOTON.2016.163
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Large-scale computer installations are severely limited by network-bandwidth constraints and energy costs that arise from architectural designs originally based on copper interconnects(1). Wavelength-division multiplexed (WDM) photonic links can increase the network bandwidth but are sensitive to environmental perturbations and manufacturing imperfections that can affect the precise emission wavelength and output power of laser transmitters(2,3). Here, we demonstrate a new design of a three-terminal hybrid III-V-on-silicon laser that integrates a metal-oxide-semiconductor (MOS) capacitor into the laser cavity. The MOS capacitor makes it possible to introduce the plasma-dispersion effect(4) and thus change the laser modal refractive index and free-carrier absorption (FCA) loss to tune the laser wavelength and output power, respectively. The approach enables a highly energy efficient method to tune the output power and wavelength of microring lasers, with future prospects for high-speed, chirp-free direct laser modulation. The concept is potentially applicable to other diode laser platforms.
引用
收藏
页码:719 / 722
页数:4
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