Nanopatterning by direct-write atomic layer deposition

被引：70

作者：

Mackus, A. J. M. ^{[1
]}

Dielissen, S. A. F. ^{[2
]}

Mulders, J. J. L. ^{[2
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] FEI Electron Opt, NL-5600 KA Eindhoven, Netherlands

来源：

NANOSCALE | 2012年 / 4卷 / 15期

关键词：

BEAM-INDUCED DEPOSITION; ELECTRON-BEAM; CARBON NANOTUBE; PLATINUM; GRAPHENE;

D O I：

10.1039/c2nr30664f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel direct-write approach is presented, which relies on area-selective atomic layer deposition on seed layer patterns deposited by electron beam induced deposition. The method enables the nanopatterning of high-quality material with a lateral resolution of only similar to 10 nm. Direct-write ALD is a viable alternative to lithography-based patterning with a better compatibility with sensitive nanomaterials.

引用

页码：4477 / 4480

页数：4

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