Nanopatterning by direct-write atomic layer deposition

被引：70
|
作者：
Mackus, A. J. M. [1 ]
Dielissen, S. A. F. [2 ]
Mulders, J. J. L. [2 ]
Kessels, W. M. M. [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] FEI Electron Opt, NL-5600 KA Eindhoven, Netherlands
来源：
NANOSCALE | 2012年 / 4卷 / 15期
关键词：
BEAM-INDUCED DEPOSITION; ELECTRON-BEAM; CARBON NANOTUBE; PLATINUM; GRAPHENE;
D O I：
10.1039/c2nr30664f
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A novel direct-write approach is presented, which relies on area-selective atomic layer deposition on seed layer patterns deposited by electron beam induced deposition. The method enables the nanopatterning of high-quality material with a lateral resolution of only similar to 10 nm. Direct-write ALD is a viable alternative to lithography-based patterning with a better compatibility with sensitive nanomaterials.
引用
收藏
页码：4477 / 4480
页数：4
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