0.1-μm GaAs PHEMT W-Band Low Noise Amplifier MMIC using Coplanar Waveguide Technology

被引：0

作者：

Bessemoulin, Alex ^{[1
]}

Tarazi, Labra ^{[1
]}

McCulloch, MacCrae G. ^{[1
]}

Mahon, Simon L. ^{[1
]}

机构：

[1] Macom, Level 11,157 Walker St, Sydney, NSW 2060, Australia

来源：

2014 1ST AUSTRALIAN MICROWAVE SYMPOSIUM (AMS) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the performance of a first pass design W-band low noise amplifier MMIC, based on coplanar waveguide (CPW) technology, and utilising 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 1.4 mm(2), this two-stage LNA achieves an average small signal gain of 12 dB between 80 and 100 GHz. The measured noise figure averages 5 dB up to 94 GHz. To the author knowledge, this performance is one of the very few reported for W-band LNAs fabricated in commercially available foundry process. It is also comparable to the best results reported with more advanced InP or Metamorphic HEMT low noise technologies.

引用

页码：1 / 2

页数：2

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