Tunnel Magnetoresistance of Ferromagnetic Antiperovskite MnGaN/MgO/CoFeB Perpendicular Magnetic Tunnel Junctions

被引：4
|
作者：
Lee, Hwachol [1 ]
Sukegawa, Hiroaki [1 ]
Liu, Jun [1 ,2 ]
Wen, Zhenchao [1 ]
Mitani, Seiji [1 ,2 ]
Hono, Kazuhiro [1 ,2 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2016年 / 52卷 / 07期
关键词：
Antiperovskite; MnGaN; perpendicular magnetic anisotropy (PMA); tunnel magnetoresistance (TMR); ROOM-TEMPERATURE;
D O I：
10.1109/TMAG.2016.2519283
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the tunnel magnetoresistance (TMR) effect of perpendicular magnetic tunnel junctions (p-MTJs) composed of a ferromagnetic antiperovskite MnGaN film with perpendicular magnetic anisotropy. The p-MTJ multilayer stack with MnGaN/Mg/MgO/Fe/CoFeB was used to control the MgO interface conditions by the Mg and Fe insertion layers. The Mg insertion under the MgO barrier enhanced the perpendicular anisotropy of the top Fe/CoFeB layers with post-annealing process, and thus nearly perfect perpendicular magnetization was realized. A perpendicular TMR ratio up to 3.7%similar to 3.8% was obtained at room temperature. The obtained low TMR ratio is mainly attributed to the imperfect MgO barrier, which includes many lattice-misfit dislocations at the MnGaN/MgO interface due to the large lattice mismatch of 8%. This paper suggests that improving the interface state and reducing the lattice mismatch will be required to observe a higher perpendicular TMR ratio using an MnGaN electrode.
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页数：4
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