Advanced process control for polysilicon gate etching using integrated optical CD metrology

被引：8
|
作者：
Kota, GP [1 ]
Luque, J [1 ]
Vahedi, V [1 ]
Khathuria, A [1 ]
Dziura, T [1 ]
Levy, A [1 ]
机构：
[1] Lam Res Corp, Fremont, CA 94538 USA
来源：
ADVANCED PROCESS CONTROL AND AUTOMATION | 2003年 / 5044卷
关键词：
APC; process control; etch; scatterometry; integrated metrology;
D O I：
10.1117/12.487635
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Advanced integrated metrology capability is actively being pursued in several process areas, including etch, to shorten process cycle times, enable wafer-level advanced process control (APC), and improve productivity. In this study, KLA-Tencor's scatterometry-based iSpectra Spectroscopic CD was integrated on a Lam 2300 Versys Star(TM) silicon etch system. Feed-forward control techniques were used to reduce critical dimension (CD) variation. Pre-etch CD measurements were sent to the etch system to modify the trim time and achieve targeted CDs. CDs were brought to within 1 run from a starting CD spread of 25 nm, showing the effectiveness of this process control approach together with the advantages of spectroscopic CD metrology over conventional CD measurement techniques.
引用
收藏
页码：90 / 96
页数：7
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