A bias and temperature dependent noise model of heterojunction bipolar transistors

被引：0

作者：

Pucel, RA ^{[1
]}

Daniel, T ^{[1
]}

Kain, A ^{[1
]}

Tayrani, R ^{[1
]}

机构：

[1] RCP Consultants, Needham, MA USA

来源：

1998 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bias and temperature dependent HBT noise model based on an extension of the van der Ziel noise theory is presented. An extrapolation technique is applied to the noise model that is valid for the entire bias and temperature operating range of the HBT given experimental data for a single reference condition.

引用

页码：141 / 144

页数：4

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