ZnO thin films preparation by spray pyrolysis and electrical characterization

被引：22
|
作者：
Goyal, Ankit [1 ]
Kachhwaha, S. [2 ]
机构：
[1] Univ Rajasthan, Ctr Converging Technol, Jaipur 302004, Rajasthan, India
[2] Univ Rajasthan, Dept Bot, Jaipur 302004, Rajasthan, India
来源：
MATERIALS LETTERS | 2012年 / 68卷
关键词：
Zinc oxide; Grains; Resistance; Semiconductor;
D O I：
10.1016/j.matlet.2011.11.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc oxide (ZnO) is a semiconductor material whose bandgap can be tuned, which in turn finds various optical applications. Homemade Spray pyrolysis technique is employed to prepare thin films. ZnO is II-VI group semiconductor material whose film is deposited on Glass substrate using aq. ZnCl2 as a precursor. XRD and SEM analysis is done for structural analysis. XRD analysis shows polycrystalline nature of samples with pure phase formation. SEM analysis shows ZnO thin film contains oval shape and rod shaped particles. Resistance measurement as a function of temperature (high temperature) is done for ZnO thin films. Semiconducting behaviour for ZnO is observed, which is in agreement with observed results. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：354 / 356
页数：3
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