The Output Power Characteristics of the Series-connected RTD Pair

被引：0
|
作者：
Kim, Maengkyu [1 ]
Yang, Kyounghoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon, South Korea
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
关键词：
Resonant Tunnling Diode (RTD); RTD-pair configuration;
D O I：
10.1109/iciprm.2019.8819014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the output power of the RTD-pair configuration with two different RTD epitaxial layer structures has been characterized and compared by measurements and simulations. The RTD-pair configurations with the two device structures show the improvement of the maximum output power by a factor of more than 2.5. From the comparison, the RTD with a wider peak-to-valley voltage difference is more beneficial for the enhanced RF power of RTD-pair configuration.
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页数：2
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