Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites
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Kim, Jongseob
[1
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Chung, Choong-Heui
[2
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Hong, Ki-Ha
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Hanbat Natl Univ, Dept Mat Sci & Engn, 125 Dongseo Daero, Daejeon 34014, South KoreaSamsung Elect Co Ltd, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea
Hong, Ki-Ha
[2
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机构:
[1] Samsung Elect Co Ltd, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea
[2] Hanbat Natl Univ, Dept Mat Sci & Engn, 125 Dongseo Daero, Daejeon 34014, South Korea
Organic-inorganic hybrid perovskites have unique electronic properties in which deep level defects are rarely formed. This unique defect characteristic is the source of the long carrier diffusion length. This theoretical study shows what causes this characteristic formation of shallow level defects in lead tri-halide perovskites. Comparative studies between iodides and other halides showed that deep level defect states were generated for Cl based perovskites. Longer Pb-halide bond lengths and narrower band gaps are beneficial for preventing deep level defect states. Additionally, our study shows that the formation of shallow level defects does not change even when the lattice structures of the perovskites do not reach their equilibrium structures.