Unified Stochastic Reliability Aware Model for SONOS Memories in Harsh Environments

被引：0
|
作者：
Hillebrand, Theodor [1 ]
Taddiken, Maike [1 ]
Tscherkaschin, Konstantin [1 ]
Paul, Steffen [1 ]
Peters-Drolshagen, Dagmar [1 ]
机构：
[1] Univ Bremen, Inst Electrodynam & Microelect ITEM Me, Bremen, Germany
来源：
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a state based stochastic behavioral model for SONOS memory is presented. The model takes into account all necessary system parameters such as programming and erasing voltages and durations. Moreover, the most important mechanisms for long-term applications (e.g. aerospace) such as heavy ion impact and data retention over 10 years are considered. The model is fitted with 18971 TCAD simulations and is implemented in Simulink. Due to the utilization of response surface models fast and easy analyses of large memories arrays can be carried out.
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页数：4
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