Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy

被引：0

作者：

Liu, JL ^{[1
]}

Cai, SJ ^{[1
]}

Jin, GL ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with cross-sectional dimensions between 50 nm and 2 mu m grow mainly with a growth axis parallel to the <111> direction, The growth rate of nanowires is independent of their diameters, i.e.. nanowires with different diameters have the same growth rate. From the dependence of source gas concentration on the growth rate we conclude that this independence is a fundamental one even when gas pressure ranges as high as 1 x 10(-4) Torr. This method provides a possible alternative means for fabricating ultrafine silicon quantum wires. (C) 1998 The Electrochemical Society. S1099-0062(98)03-088-7. All rights reserved.

引用

页码：188 / 190

页数：3

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