Performance of a high-pressure xenon ionization chamber for environmental radiation monitoring

被引:5
|
作者
Kim, H. S. [2 ]
Park, S. H. [2 ]
Ha, J. H. [2 ]
Kim, Y. K. [1 ]
Kim, J. K. [1 ]
Cho, S. Y. [3 ]
机构
[1] Hanyang Univ, Dept Nucl Engn, Seoul 133791, South Korea
[2] Korea Atom Energy Res Inst, Taejon, South Korea
[3] Yonsei Univ, Dept Environm Engn, Wonju, South Korea
关键词
ionization chamber; environmental radiation; shadow shielding technique; EGSnrc;
D O I
10.1016/j.radmeas.2007.12.040
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
High-pressure xenon (HPXe) ionization chambers are ideal for use in uncontrolled environments, as a detector's response has been shown to be uniform over large temperature ranges (20-170 degrees C). A cylindrical HPXe ionization chamber, which was configured with a shielding mesh to improve its energy resolution, was designed on the basis of an EGSnrc simulation code to extract an optimal density of Xe gas and a thickness of the chamber's wall. A Garfield, which was coupled with a Maxwell electric field calculator, was also employed for the electron drift simulations due to the geometry of the adapted shielding mesh. Shielding inefficiency was also calculated. A spherical ionization chamber was also designed to monitor an environmental radiation level and the responses for low dose rates with the fabricated HPXe ionization chamber were compared. A noble gas system was constructed to create a noble gas with a high purity and to inject the noble gas at up to 60 atm. The combination of an oxisorb, a molecular sieve, and a high-temperature getter can minimize the electro-negative impurities, such as the 0,) and N-2 gas, to below about several ppb levels. Preliminary tests such as leakage currents, saturation currents, and gas leak tests were pet-formed. The performance of the two fabricated ionization chambers at a low dose rate was tested by using a conventional shadow technique with a NIST certified 0.906MCi Ra-226 standard source in a calibration room at KAERI. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:659 / 663
页数:5
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