Enhanced Photoluminescence Intensity of Silicon-Germanium Nanoparticles: Silica Thin Films by Annealing in Forming Gas

被引：2
|
作者：
Zhong, Kun [1 ]
Su, Jing [1 ]
机构：
[1] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Nanjing 210044, Jiangsu, Peoples R China
来源：
SPECTROSCOPY LETTERS | 2015年 / 48卷 / 08期
关键词：
ion implantation; photoluminescence; silicon-germanium nanoparticles; SI NANOCRYSTALS; MATRIX;
D O I：
10.1080/00387010.2014.923466
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Silicon-germanium nanoparticles are prepared by ion implantation and annealing method. Further annealing treatment is carried out in forming gas to passivate nonradiative defects around nanoparticles. Time-resolved photoluminescence measurements were examined to reveal the local environment surrounding the nanoparticles. With the increase in oxygen gas content, photoluminescence intensity from specimen is enhanced by approximate to 5 times and its decay time decreases from 23.2 to 1.6 mu s. Oxygen gas is considered to be an effective passivating gas for this kind of specimen.
引用
收藏
页码：553 / 555
页数：3
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