Graphene-based fast electronics and optoelectronics

被引：0
|
作者：
Avouris, Ph [1 ]
Lin, Y-M. [1 ]
Xia, F. [1 ]
Farmer, D. B. [1 ]
Wu, Y. [1 ]
Mueller, T. [1 ]
Jenkins, K. [1 ]
Dimitrakopoulos, C. [1 ]
Grill, A. [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年
关键词：
TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present experimental results on high frequency field-effect transistors and fast photodetectors utilizing wafer-scale graphene grown epitaxially from silicon carbide.
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收藏
页数：4
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