300 GHz Six-Stage Differential-Mode Amplifier

被引：0
|
作者：
Park, H. J. [1 ]
Rieh, J. S. [1 ]
Kim, M. [1 ]
Hacker, J. B. [2 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[2] Teledyne Sci Co, Thousand Oaks, CA 91360 USA
来源：
2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年
关键词：
Indium phosphide (InP); monolithic millimeter-wave integrated circuit (MMIC); terahertz amplifier; MMIC AMPLIFIERS; GAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. T he cascade chain in the amplifier contains six unit cells each containing a pair of common-base DHBTs in differential configuration. A total of three signal lines run through to the unit-cell to obtain the differential-mode amplifier gain and provide proper dc bias. Measured results show the peak gam of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz.
引用
收藏
页码：49 / 52
页数：4
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