Plasma chemistries for dry etching of NiFe and NiFeCo

被引：10

作者：

Jung, KB ^{[1
]}

Hong, J

Cho, H

Childress, JR

Pearton, SJ

Jenson, M

Hurst, AT

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Honeywell Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 08期

关键词：

dry etching; inductively coupled plasma (ICP) etching; magnetic storage devices; magnetic multilayers; NiFe;

D O I：

10.1007/s11664-998-0129-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma chemistries based on chlorine, bromine, or iodine have been investigated for inductively coupled plasma etching of NiFe and NiFeCo. There is clear evidence of a chemically enhanced etch mechanism with both Cl-2- and I-2-based mixtures, with no enhancement present for Br, chemistries. Etch yields are typically low(less than or equal to 0.25), emphasizing the need for high ion fluxes in order to achieve practical material removal rates.

引用

页码：972 / 978

页数：7

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