Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors

被引：0

作者：

Kolagunta, VR ^{[1
]}

Janes, DB

Melloch, MR

Youtsey, C

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Univ Illinois, Dept Elect Engn, Urbana, IL 61801 USA

来源：

COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷

关键词：

D O I：

10.1109/ISCS.1998.711748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present gating effects in double well resonant tunneling heterostructures with sub-micron minimum feature widths. Resonant tunneling through one dimensional states in the wells is observed as the device approaches pinch-off at temperatures as high as 77K. This is the first clear demonstration of resonant tunneling through such laterally confined one-dimensional sub-bands at 77K.

引用

页码：597 / 600

页数：4

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